Detection of optical emissions from deep localized states in a self-assembled InAs/GaAs QD structure
This work reports on the optical properties of self-assembled InAs/GaAs quantum dots (QDs) grown by short stem pipet molecular beam epitaxy.A sigmoidal temperature-dependent variation of the bandgap energy of the dots is detected from the photoluminescence (PL) investigations of the studied sample.This sigmoidal dependence of the bandgap energy was